Electronic structure studies on silylalkanes, alkylsilanes and silysilanes
- 14 November 1983
- journal article
- Published by IOP Publishing in Journal of Physics B: Atomic and Molecular Physics
- Vol. 16 (21) , 3863-3872
- https://doi.org/10.1088/0022-3700/16/21/011
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Intramolecular electron localization and local-density calculations on silicon-containing molecules: Tetramethylsilane and hexamethyldisilaneChemical Physics, 1981
- Stability and reactivity of the silicon-carbon double bondJournal of the American Chemical Society, 1977
- (e,2e) Spectroscopy of ethaneJournal of Electron Spectroscopy and Related Phenomena, 1976
- Self-consistent molecular orbital methods. XVII. Geometries and binding energies of second-row molecules. A comparison of three basis setsThe Journal of Chemical Physics, 1976
- Photoelectron spectra and molecular properties. LI. Ionization potentials of silanes SinH2n+2Journal of the American Chemical Society, 1976
- Ab initio calculations on the electronic spectrum of ethaneChemical Physics, 1975
- Electron-diffraction studies of tetramethylsilane and hexamethyldisilane, and discussion of the lengths of Si-C bondsJournal of Molecular Structure, 1971
- Self-Consistent Molecular-Orbital Methods. IX. An Extended Gaussian-Type Basis for Molecular-Orbital Studies of Organic MoleculesThe Journal of Chemical Physics, 1971
- The C-C bond in neo-pentane, the bonding radius of the tertiary-butyl group, and their bearing on bonding hypothesesJournal of Molecular Structure, 1969
- Ab Initio Computations in Atoms and MoleculesIBM Journal of Research and Development, 1965