Photoluminescence from MBE Si grown at low temperatures; donor bound excitons and decorated dislocations
- 1 July 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (7) , 593-598
- https://doi.org/10.1088/0268-1242/4/7/019
Abstract
No abstract availableKeywords
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