Characterization procedures for double-sided silicon microstrip detectors
- 1 August 1995
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 362 (2-3) , 315-337
- https://doi.org/10.1016/0168-9002(95)00280-4
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Temperature dependence of the radiation induced change of depletion voltage in silicon PIN detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1994
- Temperature dependence of radiation damage and its annealing in silicon detectorsIEEE Transactions on Nuclear Science, 1993
- Silicon strip detectors with capacitive charge divisionNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1985