Pure effects of strain in strained-layer multiple-quantum-well lasers
- 1 April 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 29 (4) , 1098-1103
- https://doi.org/10.1109/3.214495
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Pure strain effects in strained-layer multiple-quantum-well lasersIEEE Photonics Technology Letters, 1992
- Measurement of gain saturation coefficients in strained-layer multiple quantum-well distributed feedback lasersIEEE Journal of Quantum Electronics, 1992
- Gain saturation coefficients of strained-layer multiple quantum-well distributed feedback lasersIEEE Photonics Technology Letters, 1991
- Dependence of polarization, gain, linewidth enhancement factor, and K factor on the sign of the strain of InGaAs/InP strained-layer multiquantum well lasersApplied Physics Letters, 1991
- Effect of strain on the resonant frequency and damping factor in InGaAs/InP multiple quantum well lasersApplied Physics Letters, 1991
- Frequency response of an MQW DFB laser injected with intensity-modulated TM-polarized lightIEEE Photonics Technology Letters, 1991
- Oscillation wavelength and laser structure dependence of nonlinear damping effect in semiconductor lasersApplied Physics Letters, 1991
- 10 Gbit/s low chirp performance of strained layer multiquantum well DFB laserElectronics Letters, 1991
- Determination of the gain compression coefficient of GaInAsP 1.5-μm multiple quantum-well lasers by harmonic distortion measurementsPublished by Optica Publishing Group ,1991
- Linewidth enhancement factor for InGaAs/InP strained quantum well lasersApplied Physics Letters, 1990