Dependence of polarization, gain, linewidth enhancement factor, and K factor on the sign of the strain of InGaAs/InP strained-layer multiquantum well lasers
- 17 June 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (24) , 2738-2740
- https://doi.org/10.1063/1.104771
Abstract
No abstract availableKeywords
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