Phase-noise behaviour of frequency dividers implemented with GaAs heterojunction bipolar transistors

24 October 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (22) , 1005-1006
https://doi.org/10.1049/el:19850712

Abstract

Near carrier phase-noise performance of GaAs microwave frequency dividers (4 GHz) is investigated. The divide-by-4 circuits are fabricated using heterojunction bipolar transistor (HBT) technology. The phase-noise behaviour of the HBT divider chips is correlated with transistor 1/f noise and is insensitive to bias current variations.

Keywords

FREQUENCY 4 GHZ
FREQUENCY DIVIDERS
PHASE-NOISE PERFORMANCE
MICROWAVE IC
TRANSISTOR 1/ F NOISE
BIAS CURRENT VARIATIONS
GAAS HETEROJUNCTION BIPOLAR TRANSISTORS

This publication has 1 reference indexed in Scilit:

Application of Heterojunction Bipolar Transistors to High Speed, Small-Scale Digital Integrated Circuits
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1984