Depth profiling of the altered layer in Ta2O5 produced by sputtering with He ions
- 1 March 1984
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 2 (1-3) , 800-803
- https://doi.org/10.1016/0168-583x(84)90318-5
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Surface modifications due to preferential sputteringApplications of Surface Science, 1982
- Threshold sputtering effects in a Cu–Au alloyJournal of Vacuum Science and Technology, 1982
- Results of a Ta2O5 sputter yield round robinSurface and Interface Analysis, 1981
- Dynamic surface composition changes in binary alloys under ion bombardmentNuclear Instruments and Methods, 1981
- On the problem of whether mass or chemical bonding is more important to bombardment-induced compositional changes in alloys and oxidesSurface Science, 1980
- Mass and energy dependence of the equilibrium surface composition of sputtered tantalum oxideApplied Physics Letters, 1978
- Sputtering of Ta2O5 by Ar+ ions at energies below 1 keVSurface Science, 1978
- Effects of enhanced diffusion on preferred sputtering of homogeneous alloy surfacesSurface Science, 1978
- In-depth profile of altered layers of copper-nickel alloys formed by sputteringSurface Science, 1977
- Ion sputtering of alloysJournal of Vacuum Science and Technology, 1976