High resolution transmission electron microscopy of InP
- 1 November 1982
- journal article
- Published by Springer Nature in Journal of Materials Science Letters
- Vol. 1 (11) , 499-502
- https://doi.org/10.1007/bf00721940
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Reply to ’’Comments on ’Thermal oxidation of InP and properties of oxide film’ ’’Journal of Applied Physics, 1982
- Comment on ’’Thermal oxidation of InP and properties of oxide film’’Journal of Applied Physics, 1982
- The growth of dislocation-free Ge-DOPED InPJournal of Crystal Growth, 1981
- Thermal oxidation of InP and properties of oxide filmJournal of Applied Physics, 1980
- Transmission electron microscopy of interfaces in III–V compound semiconductorsJournal of Vacuum Science and Technology, 1977