Carbon and silicon vacancies in electron-irradiated 6H-SiC
- 15 January 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 51 (3) , 1928-1930
- https://doi.org/10.1103/physrevb.51.1928
Abstract
Positron-lifetime and Doppler-broadening spectroscopies were used to investigate vacancies formed by 2.2- and 10-MeV electrons. Carbon vacancies yield a positron lifetime of 160 ps, only 15 ps longer than the bulk lifetime, and the Doppler-broadening S parameter is very close to that for the bulk. For silicon vacancies the positron lifetime is 260 ps and the S parameter is 1.12 times the bulk value. In n-type materials the defects are neutral, whereas in p-type materials no vacancies are detected. Introduction rates of carbon and silicon vacancies were also determined.Keywords
This publication has 10 references indexed in Scilit:
- Positron binding energies and specific trapping rates for monovacancies in GaAs and InSbPhysical Review B, 1993
- Defects in electron-irradiated 3C-SiC epilayers observed by positron annihilationHyperfine Interactions, 1993
- Neutron Transmutation Doping of Isotopically Controlled GeMaterials Science Forum, 1993
- Electron spin resonance study of defects in CVD-grown 3C-SiC irradiated with 2MeV protonsJournal of Electronic Materials, 1992
- Defect characterization in diamonds by means of positron annihilationDiamond and Related Materials, 1992
- Positron trapping rates and their temperature dependencies in electron-irradiated siliconPhysical Review B, 1989
- Electron spin resonance in electron-irradiated 3C-SiCJournal of Applied Physics, 1989
- Screening of positrons in semiconductors and insulatorsPhysical Review B, 1989
- Defects and Oxygen in Silicon Studied by PositronsPhysica Status Solidi (a), 1987
- Positron studies of condensed matterAdvances in Physics, 1973