Modeling of backgating effects on GaAs digital integrated circuits
- 1 April 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 19 (2) , 245-250
- https://doi.org/10.1109/jssc.1984.1052124
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Backgating and light sensitivity in ion-implanted GaAs integrated circuitsIEEE Transactions on Electron Devices, 1982
- Carrier injection and backgating effect in GaAs MESFET'sIEEE Electron Device Letters, 1982
- Analysis of GaAs FET's for integrated logicIEEE Transactions on Electron Devices, 1980
- A device model for an ion-implanted MESFETIEEE Transactions on Electron Devices, 1979
- Planar GaAs IC technology: Applications for digital LSIIEEE Journal of Solid-State Circuits, 1978
- GaAs MESFET logic with 4-GHz clock rateIEEE Journal of Solid-State Circuits, 1977