Transmission electron microscopy study of chemical-vapor-deposited diamond by a side-view method
- 13 January 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (2) , 172-173
- https://doi.org/10.1063/1.106982
Abstract
The initial growth of synthetic diamond by dc plasma-jet chemical vapor deposition was studied with a transmission electron microscope by a side-view method. Both diamond particles and β-SiC particles were observed on the Si substrate. Si atoms in the substrate were etched clearly by the plasma jet except beneath diamond particles.Keywords
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