High purity GaAs by liquid phase epitaxy
- 1 October 1969
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 7 (20) , 1463-1465
- https://doi.org/10.1016/0038-1098(69)90022-2
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Arseniure de gallium de haute mobilite obtenu par epitaxie en phase liquideMaterials Research Bulletin, 1968
- PREPARATION AND PROPERTIES OF HIGH-PURITY EPITAXIAL GaAs GROWN FROM Ga SOLUTIONApplied Physics Letters, 1967
- Shallow donor levels and high mobility in epitaxial gallium arsenideSolid State Communications, 1966