PREPARATION AND PROPERTIES OF HIGH-PURITY EPITAXIAL GaAs GROWN FROM Ga SOLUTION
- 1 September 1967
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 11 (5) , 171-173
- https://doi.org/10.1063/1.1755084
Abstract
GaAs single crystals were grown epitaxially from Ga solution with carrier concentrations in the 1014 cm‐3 range and electron mobilities between 7500 and 9300 cm2/V‐sec at 300°K, and 50,000 and 95,000 cm2/V‐sec at 77°K. A comparison of the theoretical and experimental curves for the mobility vs temperature indicates that the significant scattering mechanisms are ionized impurities and phonons in the temperature range of 77°K to 430°K. This indicates that the epitaxial layers do not contain other mobility‐limiting imperfections to a significant degree. Photoluminescence spectra of the epitaxial layers did not show any emission due to keep lying imperfection levels.Keywords
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