Bistable impedance states in MIS structures through controlled inversion
- 1 October 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (7) , 397-399
- https://doi.org/10.1063/1.1654933
Abstract
Metal silicon‐nitride n‐p+ silicon diodes have been fabricated with I‐V characteristics similar to those of a four‐layer diode. Switching between the two impedance states, whose impedance levels differ by a factor of the order of 106, can be accomplished in less than 5 nsec. The impedance of the device is controlled by the presence or absence of the inversion layer of the MIS structure. Both impedance states require a nonzero conductance of the insulator.This publication has 2 references indexed in Scilit:
- Thin-MIS-Structure Si Negative-Resistance DiodeApplied Physics Letters, 1972
- Effects of Space-Charge Layer Widening in Junction TransistorsProceedings of the IRE, 1952