Thin-MIS-Structure Si Negative-Resistance Diode

15 April 1972

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 20 (8) , 269-270
https://doi.org/10.1063/1.1654143

Abstract

We have realized a high‐switching‐speed Si S‐shaped negative‐resistance diode having a thin MIS structure where the thickness of the SiO₂ layer is less than 100 Å. It has a p‐n‐I (insulator)‐M (metal) structure in contrast with a Shockley diode. The threshold and sustaining voltages are about 20 and 2–3 V, respectively. The regenerative nature of this device may be related to the minority carrier injection into the interface between the n layer and the insulating layer, and electron trapping in the interface states.

Keywords

This publication has 3 references indexed in Scilit:

METAL-DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURES
Applied Physics Letters, 1971
Theory of tunneling into interface states
Solid-State Electronics, 1970
TUNNELING INTO INTERFACE STATES OF MOS STRUCTURES
Applied Physics Letters, 1967