Deep level study by analysis of thermal and optical transients in semiconductor junctions
- 1 October 1980
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 23 (2) , 215-221
- https://doi.org/10.1007/bf00899721
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- New technique for identification of deep-level trap emission to indirect conduction minima in GaAsApplied Physics Letters, 1978
- Photocapacitance quenching effect for “oxygen” in GaAsSolid State Communications, 1978
- Trap depth and electron capture cross section determination by trap refilling experiments in Schottky diodesApplied Physics Letters, 1978
- Study of the main electron trap inalloysPhysical Review B, 1977
- Deep Level Impurities in SemiconductorsAnnual Review of Materials Science, 1977
- Capacitance Transient SpectroscopyAnnual Review of Materials Science, 1977
- A study of deep levels in GaAs by capacitance spectroscopyJournal of Electronic Materials, 1975
- A study of electron traps in vapour-phase epitaxial GaAsApplied Physics B Laser and Optics, 1975
- A NEW METHOD FOR DETERMINATION OF DEEP-LEVEL IMPURITY CENTERS IN SEMICONDUCTORSApplied Physics Letters, 1970
- Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experimentsSolid-State Electronics, 1970