Hydrogen Passivation of Polysilicon Thin-Film Transistors by Electron Cyclotron Resonance Plasma

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Abstract
We have investigated the method of hydrogenation of polysilicon thin-film transistors (TFT) by electron cyclotron resonance (ECR) plasma. It is found that with decreasing pressure (1.5 to 0.35 mTorr) of the hydrogen plasma, the substrate temperature rises due to bombardment of hydrogen ions. At the same time, the amount of hydrogen supplied by the ECR plasma increases. Due to these two effects, the passivation proceeds more quickly under low pressure. The amount of hydrogen supplied by a low-pressure ECR hydrogen plasma is higher than that supplied by other means such as Al sintering or rf hydrogen plasma. When polysilicon TFTs are exposed to the ECR hydrogen plasma, the hydrogenation reduces 75% of the electrically active defect states in 15 min. Polysilicon TFTs with an offset-drain structure reached an on/off current ratio of 8 decades after such ECR hydrogen passivation.