Experimental Investigation of Double Injection in p-Type Silicon
- 1 May 1968
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 7 (5)
- https://doi.org/10.1143/jjap.7.557
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Space-Charge-Limited Current of Holes in Silicon and Techniques for Distinguishing Double and Single InjectionJournal of Applied Physics, 1967
- Dependence of double injection currents on both voltage and sample thickness in p-type siliconSolid State Communications, 1967
- SPACE-CHARGE-LIMITED CURRENTS IN HIGH-RESISTIVITY p-TYPE SILICONApplied Physics Letters, 1967
- Double-injection experiments in semi-insulating silicon diodesSolid-State Electronics, 1965
- TWO-CARRIER RECOMBINATION LIMITED CURRENTS IN Si p-π-n JUNCTIONSApplied Physics Letters, 1964
- Volume-Controlled, Two-Carrier Currents in Solids: The Injected Plasma CasePhysical Review B, 1961