Dependence of double injection currents on both voltage and sample thickness in p-type silicon
- 30 June 1967
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 5 (6) , 475-477
- https://doi.org/10.1016/0038-1098(67)90597-2
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Observations of space-charge-limited currents in p-type siliconSolid-State Electronics, 1967
- Injection and Transport of Added Carriers in Silicon at Liquid-Helium TemperaturesJournal of Applied Physics, 1966
- Observation of Double Injection in Long SiliconStructuresPhysical Review B, 1965
- Experimental Investigations of Single Injection in Compensated Silicon at Low TemperaturesPhysical Review B, 1964
- Double Injection in Deep-Lying Impurity SemiconductorsJournal of Applied Physics, 1964
- Volume-Controlled, Two-Carrier Currents in Solids: The Injected Plasma CasePhysical Review B, 1961