Comparison of profile tailing in SIMS analyses of various impurities in silicon using nitrogen, oxygen, and neon ion beams at near-normal incidence
- 1 April 1990
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 50 (4) , 417-424
- https://doi.org/10.1007/bf00323600
Abstract
No abstract availableKeywords
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