Dichlorosilane effects on low-temperature selective silicon epitaxy
- 7 January 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (1) , 59-61
- https://doi.org/10.1063/1.104444
Abstract
Low-temperature selective silicon epitaxial growth using a dichlorosilane-hydrogen mixture in a low-pressure chemical vapor deposition hot-wall reactor has been studied. A simple HF vapor treatment effectively removes surface oxides and passivates the Si surface prior to reactor loading. The addition of a small concentration of dichlorosilane to the H2 ambient during the prebake at a temperature of 900 °C improves selective epitaxial quality both by maintaining an oxide-free surface, and by suppressing undercut of oxide-covered regions. With these process improvements defect-free, selectively overgrown Si epitaxial layers are achieved at deposition temperatures between 800 and 850 °C.Keywords
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