Observation of GaSe–SnO2 Heterostructure by XPS and AES
- 1 January 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (1A) , L25
- https://doi.org/10.1143/jjap.21.l25
Abstract
The depth profile of the elemental composition of the GaSe–SnO2 heterostructure has been studied by XPS and AES. The SnO2 layer was prepared by spraying a solution of SnCl4 and SbCl3 in ethyl alcohol on to the the cleaved surface of GaSe heated to ∼400°C in air. After the solution had been sprayed on for about 5 secs., an SnO2 layer of thickness ∼460 Å formed, and a Ga2O3 layer of thickness ∼120 Å formed under the SnO2 layer. The Ga2O3 layer is a likely origin of the high-resistivity layer observed in the GaSe–SnO2 heterostructure.Keywords
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