Electrooptical properties of SnO2 spray–GaSe and SnO2 spray–GaTe heterojunctions
- 16 May 1978
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 47 (1) , 195-199
- https://doi.org/10.1002/pssa.2210470121
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Splittings and correlations between the long-wavelength optical phonons in the layer compounds GaSe, GaTe, andPhysical Review B, 1977
- Photovoltaic properties of GaSe and InSe junctionsIl Nuovo Cimento B (1971-1996), 1977
- GaSe−SnO 2 heterojunction and its electroluminescenceIl Nuovo Cimento B (1971-1996), 1977
- Photoluminescence of layered GaSe1−xTex crystalsPhysica Status Solidi (b), 1976
- Electrical and Optical Properties of GaSe-SnO2HeterojunctionsJapanese Journal of Applied Physics, 1976
- Electroluminescence in Forward Biased GaSe-SnO2HeterojunctionJapanese Journal of Applied Physics, 1974
- Near edge optical absorption and luminescence of GaSe, GaS and of mixed crystalsJournal of Luminescence, 1973
- Electro-reflectance near the fundamental edge of GaSeJournal of Physics and Chemistry of Solids, 1970
- Electroluminescence and bulk differential negative resistance inp-GaSeIl Nuovo Cimento B (1971-1996), 1969
- Injection electroluminescence of gallium selenideIl Nuovo Cimento B (1971-1996), 1968