Sensitivity analysis of 50-GHz MMIC-LNA on gate-recess depth with InAlAs/InGaAs/InP HEMTs
- 17 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- High-efficiency InP-based HEMT MMIC power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Monolithic InP HEMT V-band low-noise amplifierIEEE Microwave and Guided Wave Letters, 1992
- DC, small-signal, and noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge-control characteristicsIEEE Transactions on Electron Devices, 1990
- Uniplanar MMICs and their applicationsIEEE Transactions on Microwave Theory and Techniques, 1988
- Optimum Noise Measure Terminations for Microwave Transistor Amplifiers (Short Paper)IEEE Transactions on Microwave Theory and Techniques, 1985
- An efficient method for computer aided noise analysis of linear amplifier networksIEEE Transactions on Circuits and Systems, 1976
- Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect TransistorsPublished by Elsevier ,1975