Studies of the 1.35-eV photoluminescence band in InP

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Abstract
A commonly observed luminescence band in InP near 1.35 eV has been studied in detail. The dependence of the transition energy on sample temperature and excitation power density indicates the band results from a donor-to-acceptor pair transition involving a donor level with an activation energy of ∼33 meV. Luminescence spectra from samples implanted with Si, Al, or P show that the donors responsible for the band are native defects or complexes that result from radiation damage. These results do not support previous assignments of the 1.35-eV band to transitions involving various impurities.