Quenching of band-edge photoluminescence in InP by Cu
- 15 November 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 34 (10) , 7385-7387
- https://doi.org/10.1103/physrevb.34.7385
Abstract
We report on experimental observations of the systematic decrease in near-band-edge 80-K photoluminescence in InP upon the deliberate introduction of increasing amounts of Cu by diffusion. It is thus confirmed that Cu introduces an effective recombination center in InP. The decrease in the luminescence intensity is accompanied by the appearance of a broad band at 1.353 eV which is identified as luminescence involving the Cu impurity.Keywords
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