Transition metal diffusion in InP: Photoluminescence investigation

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Abstract
The 3d transition metals (TM’s) from Cr to Cu introduced into InP by diffusion are studied using low temperature photoluminescence (PL). Luminescence bands from Mn, Co, and Cu are observed whereas for the remaining TM’s, Cr, Fe, and Ni, no optical effects related to the diffused species are detected. This behavior is found to correlate with electrically active, compensating deep acceptor levels found for Mn, Co, and Cu in C-V measurements, but not for the other TM’s. For Mn diffusions at 800 °C deep level PL peaking at 1.15 eV ascribed to substitutional Mn2+In is observed. For the case of Cu three different PL bands are found peaking at 1.2, 1.17, and 0.99 eV, respectively. It is speculated that the 1.0-eV band may arise from CuIn centers. The higher energy bands arise from Cu-related complexes. Reasons for the electrical and PL activity of Mn and Co, but not for the adjacent fast diffusing TM’s Cr and Fe which are electrically active in growth doped material, are discussed in terms of the particularly deep acceptor levels formed by Mn and Co.