Diffusion Mechanism of Nickel and Point Defects in Silicon
- 1 February 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (2R) , 276
- https://doi.org/10.1143/jjap.21.276
Abstract
The in-diffusion of nickel into silicon and the annealing of nickel in silicon have been studied experimentally at 900°C. The variations in concentration of substitutional nickel with time are described well by an exponential function predicted from a dissociative mechanism, in both the in-diffusion and annealing processes. The time constant in the annealing process is substantially independent of the initial concentration of substitutional nickel. These results support the theory that nickel in silicon diffuses by a dissociative mechanism and that the dominant point defects in silicon are vacancies.Keywords
This publication has 14 references indexed in Scilit:
- Criterions for Basic Assumptions in Kick-Out Mechanism of DiffusionJapanese Journal of Applied Physics, 1981
- Dissociative Diffusion Limiting Process in Silicon and GermaniumJapanese Journal of Applied Physics, 1973
- The Effect of Dislocation Density on the Diffusion of Gold in Thin Silicon SlicesJournal of the Electrochemical Society, 1973
- Dissociative Diffusion of Gold in SiliconJapanese Journal of Applied Physics, 1970
- The diffusion of gold in thin silicon slicesSolid-State Electronics, 1970
- Criterions for the Assumptions of Thermal Equilibrium of Interstitial Atoms and of Vacancies in Dissociative DiffusionJapanese Journal of Applied Physics, 1969
- Dissociative Diffusion of Nickel in Silicon and Self-Diffusion of SiliconJapanese Journal of Applied Physics, 1967
- Wirkung der Mengendichte der Ausscheidung auf den Keim der Nickelausscheidung entlang der Vetsetzung in SiliciumJapanese Journal of Applied Physics, 1965
- Behavior of Nickel as an Impurity in SiliconJapanese Journal of Applied Physics, 1964
- Mechanism of Gold Diffusion into SiliconJournal of Applied Physics, 1964