Characterization of process-induced strains in GaAs/Ga0.7Al0.3As quantum dots using room-temperature photoreflectance
- 23 May 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (21) , 2830-2832
- https://doi.org/10.1063/1.111439
Abstract
Using contactless photoreflectance at 300 K, we have studied several GaAs/Ga0.7Al0.3As quantum dot arrays fabricated by reactive‐ion etching using SiCl4. The spectrum from a control sample that had no dots also was recorded. From the observed shifts of the fundamental conduction to heavyand of the process‐induced strain in the dots.Keywords
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