Effect of grain boundaries in silicon on minority-carrier diffusion length and solar-cell efficiency
- 15 December 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (12) , 1009-1011
- https://doi.org/10.1063/1.90250
Abstract
The spatial variation of minority‐carrier diffusion length in the vicinity of a grain boundary for a polycrystalline silicon sheet has been measured by the use of the EBIC technique. The effect of such a variation on solar‐cell output has then been computed as a function of grain size. Calculations show that the cell output drops considerably for grain size smaller than three times the bulk diffusion length.Keywords
This publication has 2 references indexed in Scilit:
- Theory of life time measurements with the scanning electron microscope: Steady stateSolid-State Electronics, 1976
- Electron-Beam Excited Minority-Carrier Diffusion Profiles in SemiconductorsJournal of Applied Physics, 1972