Theory of life time measurements with the scanning electron microscope: Steady state
- 30 June 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (6) , 437-445
- https://doi.org/10.1016/0038-1101(76)90003-4
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Analysis and measurement of carrier lifetimes in the various operating modes of power devicesSolid-State Electronics, 1974
- Measurement of spatial variations of the carrier lifetime in silicon power devicesPhysica Status Solidi (a), 1972
- Electron-Beam Excited Minority-Carrier Diffusion Profiles in SemiconductorsJournal of Applied Physics, 1972
- Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid MaterialsJournal of Applied Physics, 1971
- Injected Current Carrier Transport in a Semi-Infinite Semiconductor and the Determination of Lifetimes and Surface Recombination VelocitiesJournal of Applied Physics, 1955
- The Transport of Added Current Carriers in a Homogeneous SemiconductorPhysical Review B, 1953
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952