Analysis and measurement of carrier lifetimes in the various operating modes of power devices
- 31 October 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (10) , 1099-1106
- https://doi.org/10.1016/0038-1101(74)90151-8
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Experimental verification of the Shockley–Read–Hall recombination theory in siliconElectronics Letters, 1973
- Measurement of spatial variations of the carrier lifetime in silicon power devicesPhysica Status Solidi (a), 1972
- Recombination in silicon p−π−n diodesSolid-State Electronics, 1967
- An experimental determination of the carrier lifetime in p-i-n diodes from the stored carrier chargeSolid-State Electronics, 1964
- Recombination Properties of Gold in SiliconPhysical Review B, 1958
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957
- Measurement of Minority Carrier Lifetime and Surface Effects in Junction DevicesProceedings of the IRE, 1955
- Switching Time in Junction Diodes and Junction TransistorsProceedings of the IRE, 1954
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Electron-Hole Recombination in GermaniumPhysical Review B, 1952