The effect of electric field on the excitonic states in coupled quantum well structures
- 15 August 1994
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (4) , 2299-2305
- https://doi.org/10.1063/1.357601
Abstract
We have calculated by a variational procedure the excitonic states in symmetric coupled quantum well structures of GaAs/AlGaAs in the presence of an external electric field perpendicular to the interfacial plane using a nonseparable, nonspherical hydrogenic trial wavefunction. The exciton binding energies have been calculated as a function of external electric field for various well and barrier widths. The nonspherical trial wavefunction leads to a better estimate of the exciton binding energy, especially in high electric field, than that calculated with a spherical one. The calculations show that the binding energy is strongly dependent on the external electric fields: the variation (increase or decrease) is related to the spatial distribution of the wavefunctions. The results of the calculation are consistent with our experimental results.This publication has 30 references indexed in Scilit:
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