Longitudinal Magnetoresistance and Hall Effect of CdxHg1−x Te in Strong Magnetic Fields
- 1 August 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 64 (2) , 717-727
- https://doi.org/10.1002/pssb.2220640236
Abstract
The results of measurements of the Hall coefficient and longitudinal magnetoresistance of CdxHg1−xTe (0.1 ≦ × ≦ 0.2) in the temperature range 1.8 to 300 K and in magnetic fields up to 300 koe are reported. The analysis of the data for zero‐gap semiconductors (x = 0.1) based on the two‐band model shows that hole‐like conduction in an impurity band, imposed on the conduction band, takes place. The strong rise of magnetoresistance observed in magnetic field for semiconducting compounds (x = 0.175 and x = 0.20) is attributed mainly to variation of the scattering probability at low temperatures and to the shift of the band edges in the magnetic field at higher temperatures.Keywords
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