A scanning tunneling microscopy study of low-temperature grown GaAs
- 1 December 1993
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 22 (12) , 1383-1386
- https://doi.org/10.1007/bf02649981
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Tunneling spectroscopy on the GaAs(110) surface: Effect of dopant concentrationSurface Science, 1992
- Role of excess As in low-temperature-grown GaAsPhysical Review B, 1992
- Atom-resolved imaging and spectroscopy on the GaAs(001) surface using tunneling microscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Compensating surface defects induced by Si doping of GaAsPhysical Review Letters, 1991
- On compensation and conductivity models for molecular-beam-epitaxial GaAs grown at low temperatureJournal of Applied Physics, 1991
- The role of As in molecular-beam epitaxy GaAs layers grown at low temperatureJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a denseEL2-like bandPhysical Review B, 1990
- New MBE buffer used to eliminate backgating in GaAs MESFETsIEEE Electron Device Letters, 1988