On compensation and conductivity models for molecular-beam-epitaxial GaAs grown at low temperature
- 15 September 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (6) , 3148-3151
- https://doi.org/10.1063/1.349295
Abstract
Molecular-beam-epitaxial GaAs grown at 200 °C has an extremely high (≳1019 cm−3) concentration of AsGa defects and, after an anneal at 550–600 °C, a high concentration of As precipitates. The relative roles of the AsGa defects and As precipitates in compensation and conductivity is controversial. Here criteria are developed to distinguish between two existing models.This publication has 14 references indexed in Scilit:
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