Low-temperature buffer GaAs MESFET technology for high-speed integrated circuit applications

1 August 1989

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 10 (8) , 355-357
https://doi.org/10.1109/55.31755

Abstract

The fabrication of high-performance digital integrated circuits with low-temperature buffer (LTB) GaAs MESFET technology is presented. Individual 0.2- mu m-gate-length transistors show a g/sub m/ of 600 mS/mm and an extrapolated f/sub T/ of 80 GHz. Backgating and light sensitivity are eliminated with the LTB technology. Static source-coupled FET logic frequency dividers exhibit a maximum clock rate of 22 GHz.

Keywords

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