Backgating in GaAs/(Al,Ga)As modulation-doped field-effect transistors and its reduction with a superlattice
- 1 October 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (7) , 764-766
- https://doi.org/10.1063/1.95397
Abstract
Backgating in GaAs/(Al, Ga)As modulation-doped field-effect transistors was investigated experimentally and theoretically. The backgating transconductance varied linearly with buffer layer thickness for thicknesses of 1–3 μm. Incoporation of a thin superlattice at the substrate-epi interface reduced the backgating by about 20%. A model consistent with these findings was developed by treating the substrate potential and buffer layer background doping as a perturbation which raises or lowers the subband energies in the potential well containing the two-dimension electron gas.Keywords
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