Mechanism of surface conduction in semi-insulating GaAs
- 1 May 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (9) , 869-871
- https://doi.org/10.1063/1.94961
Abstract
The space-charge-limited current leakage in processed semi-insulating GaAs wafer has been found to occur very close to the surface. The depth profile of the EL2 traps has been calculated from the measured trap-fill-limited voltage (Vt) of the leakage current versus etch depth and agrees well with the reported experimental result. A proposed mechanism of surface conduction is presented based on EL2 outdiffusion. The calculated substrate I-V relation agrees quantitatively with the measured results.Keywords
This publication has 5 references indexed in Scilit:
- Carrier injection and backgating effect in GaAs MESFET'sIEEE Electron Device Letters, 1982
- Outdiffusion of the main electron trap in bulk GaAs due to thermal treatmentApplied Physics Letters, 1982
- Correlation of GaAs surface chemistry and interface Fermi-level position: A single defect model interpretationJournal of Vacuum Science and Technology, 1981
- Injection Currents in InsulatorsProceedings of the IRE, 1962
- Space-Charge Limited Emission in SemiconductorsPhysical Review B, 1953