Influence of AlxGa1−xAs buffer layers on the performance of modulation-doped field-effect transistors
- 15 May 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (10) , 879-881
- https://doi.org/10.1063/1.92933
Abstract
Normally‐off and pseudo‐normally‐on modulation‐doped Al0.3Ga0.7As/GaAs Schottky barrier field‐effect transistors were fabricated and characterized. The structures were grown by molecular beam epitaxy and exhibited electron mobilities as high as 8000, 100 000, and 200 000 cm2/Vs at 300, 78, and 10 K, respectively. Inclusion of an Al0.3Ga0.7As buffer layer between the substrate and the modulation‐doped layers improved the transconductance and saturation characteristics substantially. This improvement was observed to be strongly dependent on the substrate temperature during the buffer layer growth, with the best results being obtained at 700 °C.Keywords
This publication has 7 references indexed in Scilit:
- Influence of substrate temperature on the mobility of modulation-doped AlxGa1−xAs/GaAs heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1982
- Molecular beam epitaxy growth of (Al, Ga)As/GaAs heterostructuresJournal of Crystal Growth, 1982
- Low-noise two-dimensional electron gas FETElectronics Letters, 1981
- Molecular beam epitaxial GaAs-AlxGa1-xAs heterostructures for metal semiconductor field effect transistor applicationsApplied Physics Letters, 1981
- Enhancement-Mode High Electron Mobility Transistors for Logic ApplicationsJapanese Journal of Applied Physics, 1981
- A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs HeterojunctionsJapanese Journal of Applied Physics, 1980
- Rectification at n-n GaAs:(Ga,Al)As heterojunctionsElectronics Letters, 1979