Molecular beam epitaxial GaAs-AlxGa1-xAs heterostructures for metal semiconductor field effect transistor applications
- 1 May 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (9) , 708-710
- https://doi.org/10.1063/1.92487
Abstract
High‐quality GaAs‐AlxGa1‐xAs heterostructures for metal semiconductor field effect transistor (MESFET) applications have been grown by molecular beam epitaxy. 0.5‐μm‐thick n‐type GaAs active layers with free‐carrier concentrations ∼1.1×1017 cm−3 and room‐temperature electron mobilities ∼4400 cm2 V−1 sec−1 were routinely obtained on top of undoped AlxGa1‐x As (x∼0.4) buffer layers. MESFET’s fabricated on these layers showed approximately 2000‐Ω‐mm output resistance.Keywords
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