Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures
- 8 May 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (19) , 1881-1883
- https://doi.org/10.1063/1.101229
Abstract
GaAs layers grown by molecular beam epitaxy (MBE) at substrate temperatures between 200 and 300 °C were studied using transmission electron microscopy (TEM), x-ray diffraction, and electron paramagnetic resonance (EPR) techniques. High-resolution TEM cross-sectional images showed a high degree of crystalline perfection of these layers. For a layer grown at 200 °C and unannealed, x-ray diffraction revealed a 0.1% increase in the lattice parameter in comparison with bulk GaAs. For the same layer, EPR detected arsenic antisite defects with a concentration as high as 5×1018 cm−3. This is the first observation of antisite defects in MBE-grown GaAs. These results are related to off-stoichiometric, strongly As-rich growth, possible only at such low temperatures. These findings are of relevance to the specific electrical properties of low-temperature MBE-grown GaAs layers.Keywords
This publication has 9 references indexed in Scilit:
- New MBE buffer used to eliminate backgating in GaAs MESFETsIEEE Electron Device Letters, 1988
- Antisite-related defects in plastically deformed GaAsPhysical Review B, 1986
- Identification of EL2 in GaAsApplied Physics Letters, 1985
- Selective saturation of paramagnetic defects in electron- and neutron-irradiated GaAsJournal of Applied Physics, 1985
- Photoresponse of the AsGa antisite defect in as-grown GaAsApplied Physics Letters, 1985
- Identification of AsGa antisites in plastically deformed GaAsJournal of Applied Physics, 1982
- Electron spin resonance of AsGa antisite defects in fast neutron-irradiated GaAsApplied Physics Letters, 1982
- The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPRSolid State Communications, 1981
- Submillimeter EPR evidence for the As antisite defect in GaAsSolid State Communications, 1980