Selective saturation of paramagnetic defects in electron- and neutron-irradiated GaAs
- 15 June 1985
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (12) , 5196-5198
- https://doi.org/10.1063/1.335256
Abstract
A comparison of the electron paramagnetic resonance spectra obtained in fast neutron‐ and electron‐irradiated GaAs crystals has confirmed the simultaneous presence of the quadruplet and singlet spectra, ascribed previously to As4+Ga and V2−Ga centers. Only in electron‐irradiated material, however, are both signals separated by the selective microwave power saturation of the quadruplet. This apparent disparity is ascribed to a difference in the coupling between the two partners in the As4+Ga‐V2−Ga associated complexes.This publication has 9 references indexed in Scilit:
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