On the Generation of Paramagnetic Defects by the Abrahams-Buiocchi Etchant on Semiinsulating GaAs
- 16 February 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 69 (2) , K151-K156
- https://doi.org/10.1002/pssa.2210690248
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Optical and ESR spectroscopy of deep defects in III-V semiconductorsPublished by Springer Nature ,2007
- The influence of grain size on the magnetic interaction in antiferromagnetic α-Cr2O3Surface Science, 1981
- Submillimeter EPR evidence for the As antisite defect in GaAsSolid State Communications, 1980
- Arsenic precipitation at dislocations in GaAs substrate materialJournal of Applied Physics, 1980
- EPR investigations of the defect chemistry of semi-insulating GaAs : CrJournal of Applied Physics, 1979
- Identification of the Isolated Ga Vacancy in Electron-Irradiated GaP through EPRPhysical Review Letters, 1978
- Electron Paramagnetic Resonance of Two Stoichiometry‐Induced Intrinsic Defect Centres in CuGaS2Physica Status Solidi (b), 1976
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965