Electron Paramagnetic Resonance of Two Stoichiometry‐Induced Intrinsic Defect Centres in CuGaS2
- 1 July 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 76 (1) , 363-370
- https://doi.org/10.1002/pssb.2220760139
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Chemical vapor growth and properties of CuA¢lS2Materials Research Bulletin, 1975
- Junction electroluminescence in CuInS2Applied Physics Letters, 1975
- Analysis of the electrical and luminescent properties of CuInSe2Journal of Applied Physics, 1975
- Homojunction fabrication in CuInSe2 by copper diffusionApplied Physics Letters, 1975
- Electronic structure of in chalcopyrite semiconductorsPhysical Review B, 1975
- ESR-analysis of 3d7 ions in IBIIIVI2 semiconductorsSolid State Communications, 1974
- Electrical properties of CuGaS2Journal of Applied Physics, 1973
- ESR-analysis of the chalcopyrite structure: CuGaS2:Fe3+Journal of Physics and Chemistry of Solids, 1973
- Optical Properties of CuGaS2 near the Fundamental Absorption EdgePhysica Status Solidi (b), 1973
- Room-Temperature Electrical Properties of Ten I-III-VI2 SemiconductorsJournal of Applied Physics, 1972