Homojunction fabrication in CuInSe2 by copper diffusion
- 1 April 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (7) , 383
- https://doi.org/10.1063/1.88185
Abstract
Rectifying p−n junctions have been fabricated in single crystals of CuInSe2 by diffusion of copper at relatively low temperatures. Some evidence of device instability at room temperature has been obtained.Keywords
This publication has 4 references indexed in Scilit:
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- The fabrication of p and n type single crystals of CuInSe2Journal of Crystal Growth, 1973
- Electrical properties of CuInSe2 single crystalsSolid-State Electronics, 1973
- Room-Temperature Electrical Properties of Ten I-III-VI2 SemiconductorsJournal of Applied Physics, 1972