Electrical properties of CuGaS2
- 1 November 1973
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (11) , 4988-4990
- https://doi.org/10.1063/1.1662075
Abstract
A series of CuGaS2 crystals were annealed in excess sulfur at temperatures between 250 and 850°C. This treatment varies the room-temperature hole density from 5 × 1015 cm−3 to 2 × 1018 cm−3. From the temperature dependence of the resistivity, the acceptor ionization energies of several representative samples were determined. The energy increases from 5 to 70 meV as a function of increasing resistivity.This publication has 6 references indexed in Scilit:
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