The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPR
- 31 October 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 40 (4) , 473-477
- https://doi.org/10.1016/0038-1098(81)90864-4
Abstract
No abstract availableKeywords
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