New EPR data for chromium in electron-irradiated p-type GaAs: the observation of Cr complexes
- 28 February 1981
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 14 (6) , L139-L144
- https://doi.org/10.1088/0022-3719/14/6/005
Abstract
Gallium arsenide doubly doped with zinc and chromium has been subjected to 2 MeV electron irradiation in stages at room temperatures and examined by the EPR technique after each stage. When the free carrier absorption is first eliminated a signal attributed to Crs4+ is observed, but with further dose, spectra due to Cr in lower symmetries are observed. A predominant centre has C3v symmetry and is tentatively ascribed to (Crs4+-Gai) nearest-neighbour pairs. The pairing results from the displacement and subsequent motion of intrinsic defects introduced by the irradiation.Keywords
This publication has 9 references indexed in Scilit:
- EPR measurements on chromium doped GaAs, GaP and InPSolid State Communications, 1980
- New EPR data and photoinduced changes in GaAs: Cr. Reinterpretation of the "second-acceptor" state asPhysical Review B, 1980
- Chromium as a hole trap in GaP and GaAsApplied Physics Letters, 1980
- Optically induced transient electron paramagnetic resonance phenomena in GaAs:CrJournal of Applied Physics, 1980
- Diffusion of chromium in gallium arsenideJournal of Physics D: Applied Physics, 1979
- A low-symmetry interstitial boron centre in irradiated gallium arsenideJournal of Physics C: Solid State Physics, 1978
- Electrical compensation in semi-insulating gallium arsenideJournal of Physics C: Solid State Physics, 1978
- EPR ofin GaAs—evidence for strong Jahn-Teller effectsPhysical Review B, 1977
- Statistics of the Charge Distribution for a Localized Flaw in a SemiconductorPhysical Review B, 1957