Chromium as a hole trap in GaP and GaAs

1 May 1980

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 36 (9) , 747-748
https://doi.org/10.1063/1.91636

Abstract

A characteristic electron spin resonance signal at g=1.986 has been observed in p‐type Cr‐doped GaP. It is assigned to a hole trap state of isolated chromium, presumably the A⁺ state Cr⁴⁺(3d²). Evidence for the existence of this state in GaAs is also presented.

Keywords

This publication has 12 references indexed in Scilit:

Decay of the deep-level extrinsic photoconductivity response of n-GaAs(Cr,Si) at liquid-helium temperature
Journal of Physics C: Solid State Physics, 1979
Hall-Effect Analysis of Persistent Photocurrents in $n$ -GaAs Layers
Physical Review Letters, 1979
ESR assessment of 3d7 transition metal impurity states in GaP, GaAs and InP
Solid State Communications, 1978
ESR of the doubly ionized Cr acceptor and infrared luminescence of Cr in GaP:Cr
Physical Review B, 1978
EPR of ${Cr}^{2 +}$ ( $3 d^{4}$ ) in gallium arsenide: Jahn-Teller distortion and photoinduced charge conversion
Physical Review B, 1977
EPR study of ${Fe}^{3 +}$ and ${Cr}^{2 +}$ in InP
Physical Review B, 1977
EPR of $Cr (3 d^{3})$ in GaAs—evidence for strong Jahn-Teller effects
Physical Review B, 1977
Deep traps in semi-insulating GaAs: Cr revealed by photo-sensitive ESR
Solid State Communications, 1976
ESR detection of antisite lattice defects in GaP, CdSiP2, and ZnGeP2
Applied Physics Letters, 1976
Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si- $E$ Center
Physical Review B, 1964